TSG60N100CE IGBT. Datasheet pdf. Equivalent
Type Designator: TSG60N100CE
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 208 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 210 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO264
TSG60N100CE Transistor Equivalent Substitute - IGBT Cross-Reference Search
TSG60N100CE Datasheet (PDF)
tsg60n100ce.pdf
TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1000 20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
tsg60n100.pdf
TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1000 20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Datasheet: GT50J325 , GT50J328 , GT50J341 , GT60J323 , GT60J323H , TSG15N120CN , TSG25N120CN , TSG40N120CE , SGT60U65FD1PT , APT15GP90B , APT15GP90BDF1 , APT15GP90K , APT15GT60BR , APT15GT60BRD , APT15GT60KR , APT200GN60J , APT200GN60JDQ4 .
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