All IGBT. TSG60N100CE Datasheet

 

TSG60N100CE Datasheet and Replacement


   Type Designator: TSG60N100CE
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 210 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Package: TO264
      - IGBT Cross-Reference

 

TSG60N100CE Datasheet (PDF)

 ..1. Size:409K  taiwansemi
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TSG60N100CE

TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1000 20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

 5.1. Size:426K  taiwansemi
 tsg60n100.pdf pdf_icon

TSG60N100CE

TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1000 20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Datasheet: GT50J325 , GT50J328 , GT50J341 , GT60J323 , GT60J323H , TSG15N120CN , TSG25N120CN , TSG40N120CE , IKW40N65WR5 , APT15GP90B , APT15GP90BDF1 , APT15GP90K , APT15GT60BR , APT15GT60BRD , APT15GT60KR , APT200GN60J , APT200GN60JDQ4 .

History: MP6752 | MIXA10W1200TMH | FF1400R12IP4 | IQGB300N120I4 | 2MBI900VXA-120P-50 | VS-GB100TP120U | BT15T60A8F

Keywords - TSG60N100CE transistor datasheet

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