All IGBT. IXDP20N60BD1 Datasheet

 

IXDP20N60BD1 Datasheet and Replacement


   Type Designator: IXDP20N60BD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 140 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 32 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 85 pF
   Qgⓘ - Total Gate Charge, typ: 70 nC
   Package: TO220
      - IGBT Cross-Reference

 

IXDP20N60BD1 Datasheet (PDF)

 ..1. Size:277K  ixys
 ixdp20n60bd1.pdf pdf_icon

IXDP20N60BD1

IXDP 20N60 B VCES = 600 VHigh Voltage IGBTIXDP 20N60 BD1 IC25 = 32 Awith optional DiodeVCE(sat) typ = 2.2 VHigh Speed,Low Saturation VoltageC CTO-220 ABG GG CEC (TAB)E EG = Gate, E = Emitter IXDP 20N60B IXDP 20N60B D1C = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 600 Vlow switching l

 4.1. Size:277K  ixys
 ixdp20n60b.pdf pdf_icon

IXDP20N60BD1

IXDP 20N60 B VCES = 600 VHigh Voltage IGBTIXDP 20N60 BD1 IC25 = 32 Awith optional DiodeVCE(sat) typ = 2.2 VHigh Speed,Low Saturation VoltageC CTO-220 ABG GG CEC (TAB)E EG = Gate, E = Emitter IXDP 20N60B IXDP 20N60B D1C = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 600 Vlow switching l

Datasheet: IXBX25N250 , IXBX55N300 , IXBX64N250 , IXBX75N170 , IXBX75N170A , IXDH35N60B , IXDH35N60BD1 , IXDP20N60B , RJP30H2A , IXDP35N60B , IXDR30N120 , IXDR30N120D1 , IXDR35N60BD1 , IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 .

Keywords - IXDP20N60BD1 transistor datasheet

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