IXDP20N60BD1 Specs and Replacement
Type Designator: IXDP20N60BD1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 140 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 32 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 85 pF
Package: TO220
IXDP20N60BD1 Substitution - IGBT ⓘ Cross-Reference Search
IXDP20N60BD1 datasheet
ixdp20n60bd1.pdf
IXDP 20N60 B VCES = 600 V High Voltage IGBT IXDP 20N60 BD1 IC25 = 32 A with optional Diode VCE(sat) typ = 2.2 V High Speed, Low Saturation Voltage C C TO-220 AB G G G C E C (TAB) E E G = Gate, E = Emitter IXDP 20N60B IXDP 20N60B D1 C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25 C to 150 C 600 V low switching l... See More ⇒
ixdp20n60b.pdf
IXDP 20N60 B VCES = 600 V High Voltage IGBT IXDP 20N60 BD1 IC25 = 32 A with optional Diode VCE(sat) typ = 2.2 V High Speed, Low Saturation Voltage C C TO-220 AB G G G C E C (TAB) E E G = Gate, E = Emitter IXDP 20N60B IXDP 20N60B D1 C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25 C to 150 C 600 V low switching l... See More ⇒
Specs: IXBX25N250, IXBX55N300, IXBX64N250, IXBX75N170, IXBX75N170A, IXDH35N60B, IXDH35N60BD1, IXDP20N60B, FGD4536, IXDP35N60B, IXDR30N120, IXDR30N120D1, IXDR35N60BD1, IXEH25N120, IXEH25N120D1, IXEH40N120, IXEH40N120D1
Keywords - IXDP20N60BD1 transistor spec
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