IPD70N03S4L-04
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD70N03S4L-04
Marking Code: 4N03L04
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 68
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 37
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 640
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043
Ohm
Package:
TO252
IPD70N03S4L-04
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD70N03S4L-04
Datasheet (PDF)
..1. Size:186K infineon
ipd70n03s4l-04.pdf
IPD70N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 4.3mDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD70N03S4L-04
..2. Size:186K infineon
ipd70n03s4l-04 ds.pdf
IPD70N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 4.3mDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD70N03S4L-04
7.1. Size:182K infineon
ipd70n04s3-07 ds 1 0.pdf
IPD70N04S3-07OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 6.0mDS(on),maxI 82 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N04S3-07 PG-TO252-3-11 QN0407Max
8.1. Size:176K infineon
ipd70n10s3l-12 ipd70n10s3l-12 ds 1 1.pdf
IPD70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.5mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3L-12 PG-TO252-3-11 QN10L12
8.2. Size:175K infineon
ipd70n10s3-12 ipd70n10s3-12 ds 1 1.pdf
IPD70N10S3-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.1mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3-12 PG-TO252-3-11 QN1012Max
8.3. Size:394K infineon
ipd70n12s3l-12.pdf
IPD70N12S3L-12OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 11.5 mW ID 70 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedT
8.4. Size:361K infineon
ipd70n12s3-11.pdf
IPD70N12S3-11OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 11.1 mW ID 70 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedTy
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