IRLS630A Datasheet. Specs and Replacement

Type Designator: IRLS630A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO220F

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IRLS630A substitution

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IRLS630A datasheet

 ..1. Size:920K  samsung
irls630a.pdf pdf_icon

IRLS630A

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic Level Gate Drive RDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 6.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin... See More ⇒

 9.1. Size:258K  fairchild semi
irls640a.pdf pdf_icon

IRLS630A

IRLS640A Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute M... See More ⇒

 9.2. Size:914K  samsung
irls640a.pdf pdf_icon

IRLS630A

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rati... See More ⇒

 9.3. Size:923K  samsung
irls620a.pdf pdf_icon

IRLS630A

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic Level Gate Drive RDS(on) = 0.8 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.1 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.609 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings ... See More ⇒

Detailed specifications: IRLR3303, IRLR3410, IRLS510A, IRLS520A, IRLS530A, IRLS540A, IRLS610A, IRLS620A, 60N06, IRLS640A, IRLSZ14A, IRLSZ24A, IRLSZ34A, IRLSZ44A, IRLU010, IRLU014, IRLU014A

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