IRFS740B Specs and Replacement

Type Designator: IRFS740B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm

Package: TO-220F

IRFS740B substitution

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IRFS740B datasheet

 ..1. Size:924K  fairchild semi
 irf740b irfs740b.pdf pdf_icon

IRFS740B

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 7.1. Size:304K  1
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IRFS740B

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 7.2. Size:276K  1
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IRFS740B

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 7.3. Size:931K  samsung
 irfs740a.pdf pdf_icon

IRFS740B

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val... See More ⇒

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Detailed specifications: IRFS5620PBF, IRFS59N10DPBF, IRFS614B, IRFS634B, IRFS640B, IRFS644B, IRFS654B, IRFS730B, 2SK3568, IRFS7430-7PPBF, IRFS7430PBF, IRFS7434PBF, IRFS7434-7PPBF, IRFS7437-7PPBF, IRFS7437PBF, IRFS7440PBF, IRFS7530-7PPBF

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