H2N5401 Datasheet, Equivalent, Cross Reference Search
Type Designator: H2N5401
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO-92
H2N5401 Transistor Equivalent Substitute - Cross-Reference Search
H2N5401 Datasheet (PDF)
h2n5401.pdf

Spec. No. : HE6203HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5H2N5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N5401 is designed for general purpose applications requiring highbreakdown voltages.TO-92Features Complements to NPN Type H2N5551 High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .



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