H2N5401 Datasheet. Specs and Replacement
Type Designator: H2N5401 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO-92
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H2N5401 datasheet
Spec. No. HE6203 HI-SINCERITY Issued Date 1992.09.22 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages. TO-92 Features Complements to NPN Type H2N5551 High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) ... See More ⇒
Detailed specifications: MMBTA94LT1, MMBTH10LT1, H2584, H2N3904, H2N3906, H2N4401, H2N4403, H2N5087, TIP41, H2N5551, H2N6388, H2N6718L, H2N6718T, H2N6718V, HA3669, HA8050, HA8050S
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