CM200TU-12F IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CM200TU-12F

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 590 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 100 nS

Coesⓘ - Capacitancia de salida, typ: 3600 pF

Encapsulados: MODULE

Búsqueda de reemplazo de CM200TU-12F IGBT

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CM200TU-12F datasheet

..1. Size:105K powerex
cm200tu-12f.pdf pdf_icon

CM200TU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts J T (4 TYP.) K S - NUTS (5 TYP) K R CM N P P GUP EUP GVP EVP GWP EWP L N L N L B E Q M GUN EUN GVN EVN GWN EWN TC TC MEASURING MEASURING POINT U V W POINT Description J J Powerex IGBTMOD Modules LLL are designed

8.1. Size:194K 1
cm200tl-12nf.pdf pdf_icon

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cm200tl-24nf.pdf pdf_icon

9.1. Size:50K 1
cm200dy-24h.pdf pdf_icon

MITSUBISHI IGBT MODULES CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G P C2E1 E2 C1 J C D P Description K Mitsubishi IGBT Modules are de- R Q - M6 THD N - DIA. signed for use in switching applica- (3 TYP.) (4 TYP.) tions. Each module consists of two TAB#110 t=0.5 IGBTs in a half-bridge configuration M L with each transistor having a re- M verse-conne

9.2. Size:676K 1
cm200exs-24s.pdf pdf_icon

9.3. Size:99K 1
cm200hg-130h.pdf pdf_icon

MITSUBISHI HVIGBT MODULES CM200HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM200HG-130H IC ..................................................................200 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate

9.4. Size:629K 1
cm200exs-34sa.pdf pdf_icon

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cm200rx-12a.pdf pdf_icon

9.6. Size:136K 1
cm200du-24f.pdf pdf_icon

CM200DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts A T - (4 TYP.) D TC MEASURED POINT U (4 PLACES) G2 H E2 C J B E L CM C2E1 E2 C1 E1 H G1 Description G Powerex IGBTMOD Modules Q Q P N S - NUTS are designed for use in switching (3 TYP) applications. Each m

9.7. Size:60K 1
cm200dy-28h.pdf pdf_icon

CM200DY-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD H-Series Module 200 Amperes/1400 Volts A B F F G P C2E1 E2 C1 J C D P Description K Powerex IGBTMOD Modules R Q - M6 THD N - DIA. are designed for use in switching (3 TYP.) (4 TYP.) applications. Each module consists .110 TAB M of two IGBT Transistors in a

9.8. Size:493K 1
cm200dx-34sa.pdf pdf_icon

9.9. Size:197K 1
cm200rl-24nf.pdf pdf_icon

9.10. Size:430K 1
cm200du-12nfh.pdf pdf_icon

CM200DU-12NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.com NFH-Series Module 200 Amperes/600 Volts TC MEASUREMENT POINT A N D M K K F E C2E1 E2 C1 S B H G F R J P - NUTS (3 TYP) U Q - (2 TYP) Description Powerex IGBT Modules are de- signed for use in high frequency applications; 30 kHz W W W W for hard switchi

9.11. Size:191K 1
cm200du-24nfh.pdf pdf_icon

MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE CM200DU-24NFH IC ...................................................................200A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTL

9.12. Size:563K 1
cm200dx-24s.pdf pdf_icon

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cm200dy-24nf.pdf pdf_icon

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cm200rxl-24s.pdf pdf_icon

9.15. Size:293K 1
cm200rl-12nf.pdf pdf_icon

CM200RL-12NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD + Brake NF-Series Module 200 Amperes/600 Volts A D E F H H E G G G M K N L W V U E V AB CN B G B X 1 8 C N G AC X J WP VP UP P G Description W P 1 1 1 Powerex IGBTMOD Modules E are designed for use in switching R S S K applications. Each m

9.16. Size:75K 1
cm200e3u-24f.pdf pdf_icon

MITSUBISHI IGBT MODULES CM200E3U-24F HIGH POWER SWITCHING USE CM200E3U-24F IC ...................................................................200A VCES ......................................................... 1200V Insulated Type 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 0.25 4 14 14 14 Tc measured point CM C2

9.17. Size:440K 1
cm200dy-24a.pdf pdf_icon

CM200DY-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD www.pwrx.com A-Series Module 200 Amperes/1200 Volts A F F E E G2 E2 G B J N H C2E1 E2 C1 E1 G1 G K K K M NUTS Description L D (3 PLACES) (2 PLACES) Powerex IGBTMOD Modules are designed for use in switching T THICK P P P applications. Each module Q Q U W

9.18. Size:3465K willsemi
wcm2007.pdf pdf_icon

WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http //www.sh-willsemi.com V(BR)DSS RDS(on) Typical. ( ) 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S2 6 5 4 The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl

9.19. Size:1401K willsemi
wcm2002.pdf pdf_icon

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9.20. Size:1054K willsemi
wcm2001.pdf pdf_icon

WCM2001 WCM2001 N- and P-Channel Complementary, 20V, MOSFET Http //www.willsemi.com V(BR)DSS RDS(on) Typ. ( m ) 180 @ 4.5V N-Channel 225 @ 2.5V 20 V 280 @ 1.8V 85 @ -4.5V P-Channel 110 @ -2.5V -20 V 150 @ -1.8V D1 G2 S2 6 5 4 Descriptions The WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3 package for DC-DC converter or Lo

9.21. Size:39K powerex
cm200dy-12h.pdf pdf_icon

CM200DY-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD H-Series Module 200 Amperes/600 Volts A B H E E H S C2E1 E2 C1 G C K S L Description R - M5 THD (3 TYP.) Powerex IGBTMOD Modules P - DIA. (2 TYP.) are designed for use in switching .110 TAB J J J applications. Each module consists N N of two IGBT Transistors

9.22. Size:86K powerex
cm200du-12f.pdf pdf_icon

CM200DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD 200 Amperes/600 Volts P - NUTS (3 PLACES) TC MEASURING POINT A N D Q (2 PLACES) E C2E1 E2 C1 F B G H F Description Powerex IGBTMOD Modules are designed for use in switching M K K J R applications. Each module consists of two IGBT Transisto

9.23. Size:60K powerex
cm200dy-12nf.pdf pdf_icon

CM200DY-12NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD NF-Series Module 200 Amperes/600 Volts TC MEASURED POINT (BASEPLATE) A F F E E G2 E2 G B J N H C2E1 E2 C1 E1 G1 G Description Powerex IGBTMOD Modules K K K are designed for use in switching M NUTS L D (3 PLACES) (2 PLACES) applications. Each module co

Otros transistores... CM200EXS-34SA , CM200HG-130H , CM200RL-12NF , CM200RL-24NF , CM200RX-12A , CM200RXL-24S , CM200TL-12NF , CM200TL-24NF , RJP63K2DPP-M0 , CM20MD-12H , CM225DX-24S1 , CM2400HC-34H , CM2400HC-34N , CM2400HCB-34N , CM2500DY-24S , CM25MD-24H , CM300DU-12F .