IXBF50N360 Specs and Replacement
Type Designator: IXBF50N360
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 290 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 70 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
tr ⓘ - Rise Time, typ: 420 nS
Coesⓘ - Output Capacitance, typ: 195 pF
Package: I4PAK
IXBF50N360 Substitution - IGBTⓘ Cross-Reference Search
IXBF50N360 datasheet
ixbf50n360.pdf
Advance Technical Information BiMOSFETTM Monolithic VCES = 3600V IXBF50N360 Bipolar MOS Transistor IC110 = 28A High Voltage, VCE(sat) 2.9V High Frequency (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3600 V VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V 1 2 VGES Continuous 20 V Isolated Ta... See More ⇒
ixbf55n300.pdf
High Voltage, High Gain VCES = 3000V IXBF55N300 BIMOSFETTM IC110 = 34A VCE(sat) 3.2V Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 25 V 1 2 VGEM Transient 35 V Isolated Tab 5 IC25 TC... See More ⇒
Specs: IXYN80N90C3H1, IXYN82N120C3, IXBF10N300C, IXBF14N300, IXBF15N300C, IXBF20N360, IXBF22N300, IXBF28N300, RJP30H1DPD, IXBH10N300, IXBH10N300HV, IXBH14N300HV, IXBA10N300HV, IXBA12N300HV, IXBA14N300HV, IXBA16N170AHV, IXBH20N140
Keywords - IXBF50N360 transistor spec
IXBF50N360 cross reference
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