All IGBT. IXBF50N360 Datasheet

 

IXBF50N360 Datasheet and Replacement


   Type Designator: IXBF50N360
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 420 nS
   Coesⓘ - Output Capacitance, typ: 195 pF
   Package: I4PAK
 

 IXBF50N360 substitution

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IXBF50N360 Datasheet (PDF)

 ..1. Size:209K  ixys
 ixbf50n360.pdf pdf_icon

IXBF50N360

Advance Technical InformationBiMOSFETTM MonolithicVCES = 3600VIXBF50N360Bipolar MOS TransistorIC110 = 28AHigh Voltage,VCE(sat) 2.9VHigh Frequency(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3600 VVCGR TJ = 25C to 150C, RGE = 1M 3600 V12VGES Continuous 20 VIsolated Ta

 9.1. Size:208K  ixys
 ixbf55n300.pdf pdf_icon

IXBF50N360

High Voltage, High GainVCES = 3000VIXBF55N300BIMOSFETTMIC110 = 34AVCE(sat) 3.2VMonolithic BipolarMOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 V12VGEM Transient 35 VIsolated Tab5IC25 TC

Datasheet: IXYN80N90C3H1 , IXYN82N120C3 , IXBF10N300C , IXBF14N300 , IXBF15N300C , IXBF20N360 , IXBF22N300 , IXBF28N300 , BT40T60ANF , IXBH10N300 , IXBH10N300HV , IXBH14N300HV , IXBA10N300HV , IXBA12N300HV , IXBA14N300HV , IXBA16N170AHV , IXBH20N140 .

History: IXGH28N60BD1 | SKM145GB124D | SG50N06DT | APT54GA60BD30

Keywords - IXBF50N360 transistor datasheet

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