BLM6G10-30 Datasheet and Replacement
Type Designator: BLM6G10-30
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Id| ⓘ - Maximum Drain Current: 3 A
Package: SOT834-1
BLM6G10-30 substitution
BLM6G10-30 Datasheet (PDF)
blm6g10-30 blm6g10-30g.pdf

BLM6G10-30; BLM6G10-30GW-CDMA 860 MHz - 960 MHz power MMICRev. 2 1 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Application informationTypical RF performance at Th =
blm6g22-30 blm6g22-30g.pdf

BLM6G22-30; BLM6G22-30GW-CDMA 2100 MHz to 2200 MHz power MMICRev. 4 7 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Typical performanceTypical RF performance at Th
Datasheet: BLL1214-250R , BLL1214-35 , BLL6H0514-25 , BLL6H0514L-130 , BLL6H0514LS-130 , BLL6H1214-500 , BLL6H1214L-250 , BLL6H1214LS-250 , AON6414A , BLM6G10-30G , BLM6G22-30 , BLM6G22-30G , 2SK1745 , 2SK60 , 2SJ238 , BLS2933-100 , BLS6G2731-120 .
History: FJ4B0111 | CHM50N06NGP | MVGSF1N03LT1G | HY3712PS
Keywords - BLM6G10-30 MOSFET datasheet
BLM6G10-30 cross reference
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History: FJ4B0111 | CHM50N06NGP | MVGSF1N03LT1G | HY3712PS



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