BLM6G10-30
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLM6G10-30
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28
V
|Id|ⓘ - Maximum Drain Current: 3
A
Package: SOT834-1
BLM6G10-30
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLM6G10-30
Datasheet (PDF)
..1. Size:681K philips
blm6g10-30 blm6g10-30g.pdf
BLM6G10-30; BLM6G10-30GW-CDMA 860 MHz - 960 MHz power MMICRev. 2 1 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Application informationTypical RF performance at Th =
9.1. Size:154K philips
blm6g22-30 blm6g22-30g.pdf
BLM6G22-30; BLM6G22-30GW-CDMA 2100 MHz to 2200 MHz power MMICRev. 4 7 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Typical performanceTypical RF performance at Th
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