FA57SA50LC Datasheet. Specs and Replacement

Type Designator: FA57SA50LC  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 10000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOT227

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FA57SA50LC datasheet

 ..1. Size:131K  international rectifier
 fa57sa50lc.pdf pdf_icon

FA57SA50LC

PD - 91650A FA57SA50LC HEXFET Power MOSFET Fully Isolated Package D Easy to Use and Parallel VDSS = 500V Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.08 Fully Avalanche Rated G Simple Drive Requirements ID = 57A Low Gate Charge Device S Low Drain to Case Capacitance Low Internal Inductance Description Third Generation HEXFETs from International Rectifier ... See More ⇒

 0.1. Size:188K  vishay
 fa57sa50lcp.pdf pdf_icon

FA57SA50LC

FA57SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 57 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance Designed for industrial level UL approve... See More ⇒

 6.1. Size:198K  vishay
 fa57sa50.pdf pdf_icon

FA57SA50LC

FA57SA50LCP Vishay Semiconductors Power MOSFET, 57 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/EC D... See More ⇒

Detailed specifications: F5028, F5029, F5030, F5031, F5032, F5033, F5038H, FA38SA50LC, IRFP250N, FB180SA10, AO3423B, AS2306, FDB4020P, FDB4030L, FDB5680, FDB5690, FDB6030BL

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