All MOSFET. OSS60R190JF Datasheet

 

OSS60R190JF MOSFET. Datasheet pdf. Equivalent


   Type Designator: OSS60R190JF
   Marking Code: OSS60R190J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.8 nC
   trⓘ - Rise Time: 23.9 nS
   Cossⓘ - Output Capacitance: 112.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: PDFN8X8

 OSS60R190JF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSS60R190JF Datasheet (PDF)

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