WM02P56M3
MOSFET. Datasheet pdf. Equivalent
Type Designator: WM02P56M3
Marking Code: 2P56
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 5.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14.2
nC
trⓘ - Rise Time: 27
nS
Cossⓘ -
Output Capacitance: 225
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023
Ohm
Package:
SOT23-6L
WM02P56M3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM02P56M3
Datasheet (PDF)
..1. Size:568K way-on
wm02p56m3.pdf 
WM02P56M3 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS DR
6.1. Size:536K way-on
wm02p56m2.pdf
WM02P56M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS DR
9.1. Size:474K way-on
wm02p23m.pdf
WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR
9.2. Size:831K way-on
wm02p40me.pdf
WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR
9.3. Size:364K way-on
wm02p06f.pdf
WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DSR
9.4. Size:2423K way-on
wm02p06l.pdf
Document: W0803106, Rev: B WM02P06L 1 P-Channel MOSFET Features V = -20 V, I = -0.66 A DS DR
9.5. Size:535K way-on
wm02p41m.pdf
WM02P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -4.1A DS DR
9.6. Size:424K way-on
wm02p06h.pdf
WM02P06H P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DR
9.7. Size:381K way-on
wm02p40m3.pdf
Document:W0803119, Rev: B WM02P40M3 M P-Channel MOSFET Features V = -20 V, I = -4.0 A DS DR
9.8. Size:553K way-on
wm02p06g.pdf
WM02P06G P-Channel MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -0.66 A DS DR
9.9. Size:355K way-on
wm02p60m2.pdf
Document:W0803226, Rev: B WM02P60M2 2 P-Channel MOSFET Features V = -20 V, I = -6A DS DR
9.10. Size:458K way-on
wm02p30me.pdf
WM02P30ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -3A DS DR
9.11. Size:476K way-on
wm02p26m.pdf
WM02P26M P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -20V, I = -2.6A DS DR
9.12. Size:438K way-on
wm02p18f.pdf
WM02P18F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs V = -20V, I = -1.8A DDS DR
9.13. Size:597K way-on
wm02p160r.pdf
WM02P160R 20V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM02P160R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -20V, I = -16A DS DR
9.14. Size:480K way-on
wm02p20g.pdf
WM02P20G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -2A DS DR
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