WM02P56M3 Specs and Replacement
Type Designator: WM02P56M3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 225 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SOT23-6L
WM02P56M3 substitution
WM02P56M3 datasheet
wm02p56m3.pdf
WM02P56M3 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS D R ... See More ⇒
wm02p56m2.pdf
WM02P56M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS D R ... See More ⇒
wm02p23m.pdf
WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS D R ... See More ⇒
wm02p40me.pdf
WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS D R ... See More ⇒
Detailed specifications: WM02P20G , WM02P23M , WM02P26M , WM02P30ME , WM02P40M3 , WM02P40ME , WM02P41M , WM02P56M2 , IRFB3607 , WM02P60M2 , WM03DH34M3 , WM03DH60A , WM03DN06D , WM03DN85A , WM03DP50A , WM03N01G , WM03N01H .
Keywords - WM02P56M3 MOSFET specs
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WM02P56M3 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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