AON6368
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6368
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 27
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 52
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 340
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0061
Ohm
Package:
DFN5X6
AON6368
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6368
Datasheet (PDF)
..1. Size:265K aosemi
aon6368.pdf 
AON636830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:459K aosemi
aon6362.pdf
AON636230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:268K aosemi
aon6360.pdf
AON636030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (enhanced MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
8.3. Size:362K aosemi
aon6366e.pdf
AON6366E30V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 34A Optimized for load switch RDS(ON) (at VGS=10V)
Datasheet: AON6284A
, AON6312
, AON6314
, AON6354
, AON6358
, AON6360
, AON6362
, AON6366E
, IRFZ44N
, AON6370
, AON6372
, AON6380
, AON6382
, AON6384
, AON6406
, AON6528
, AON6548
.
