All MOSFET. MDIS4N65BTH Datasheet

 

MDIS4N65BTH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDIS4N65BTH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68.3 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3.65 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 61 pF

Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm

Package: TO-251-VS

MDIS4N65BTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MDIS4N65BTH Datasheet (PDF)

1.1. mdis4n65bth.pdf Size:814K _magnachip

MDIS4N65BTH MDIS4N65BTH

 MDIS4N65B N-Channel MOSFET 650V, 3.65A, 2.2Ω Ω Ω Ω General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip’s MOSFET Technology, which provides low on- ID = 3.65A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ≤ 2.2Ω @ VGS = 10V quality. Applications These devices are suitable device for

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