All MOSFET. MDIS4N65BTH Datasheet

 

MDIS4N65BTH Datasheet and Replacement


   Type Designator: MDIS4N65BTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-251-VS
 

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MDIS4N65BTH Datasheet (PDF)

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MDIS4N65BTH

MDIS4N65B N-Channel MOSFET 650V, 3.65A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 3.65A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for

Datasheet: MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH , MDIS1903TH , MDIS2N60TH , MDIS2N65BTH , MDIS3N40TH , IRFZ46N , MDIS5N40TH , MDIS5N50TH , MDP10N50TH , MDP10N60GTH , MDP11N60TH , MDP12N50BTH , MDP12N50FTH , MDP13N50BTH .

History: FQD1N60CTM | AP3P7R0EJB

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