MDIS4N65BTH Datasheet. Specs and Replacement

Type Designator: MDIS4N65BTH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-251-VS

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MDIS4N65BTH datasheet

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MDIS4N65BTH

MDIS4N65B N-Channel MOSFET 650V, 3.65A, 2.2 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 3.65A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for... See More ⇒

Detailed specifications: MDI6N65BTH, MDIB6N70CTH, MDIS1501TH, MDIS1502TH, MDIS1903TH, MDIS2N60TH, MDIS2N65BTH, MDIS3N40TH, STF13NM60N, MDIS5N40TH, MDIS5N50TH, MDP10N50TH, MDP10N60GTH, MDP11N60TH, MDP12N50BTH, MDP12N50FTH, MDP13N50BTH

Keywords - MDIS4N65BTH MOSFET specs

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