IRFAE50 Datasheet and Replacement
Type Designator: IRFAE50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO3
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IRFAE50 Datasheet (PDF)
irfae50.pdf

PD - 90574REPETITIVE AVALANCHE AND dv/dt RATED IRFAE50800V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAE50 800V 1.2 7.1The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig
irfae30.pdf

PD - 90614REPETITIVE AVALANCHE AND dv/dt RATED IRFAE30800V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAE30 800V 3.2 3.1The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig
irfae40.pdf

PD - 90579REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40800V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAE40 800V 2.0 4.8The HEXFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art de
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: LSF65R570GT | CSD16342Q5A
Keywords - IRFAE50 MOSFET datasheet
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IRFAE50 replacement
History: LSF65R570GT | CSD16342Q5A



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