OM3N100ST Specs and Replacement
Type Designator: OM3N100ST
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.4 Ohm
Package: TO257AA
OM3N100ST substitution
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OM3N100ST datasheet
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Detailed specifications: NDT454P , NDT455N , NDT456P , OM11N55SA , OM11N60SA , OM1N100SA , OM1N100ST , OM3N100SA , AO3400 , OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT , PHB130N03LT , PHB21N06LT , PHB24N03LT , PHB2N50E .
Keywords - OM3N100ST MOSFET specs
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