All MOSFET. OM11N60SA Datasheet

 

OM11N60SA Datasheet and Replacement


   Type Designator: OM11N60SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: TO254AA
 

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OM11N60SA Datasheet (PDF)

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OM11N60SA

OM11N60SAOM11N55SAPOWER MOSFET IN HERMETIC ISOLATEDTO-254AA PACKAGE600V & 550V, 11 Amp, N-ChannelMOSFET In Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Ceramic Feedthroughs Also AvailableDESCRIPTIONThis series of hermetically packaged products feature the latest

Datasheet: NDT451N , NDT452AP , NDT452P , NDT453N , NDT454P , NDT455N , NDT456P , OM11N55SA , IRFP260N , OM1N100SA , OM1N100ST , OM3N100SA , OM3N100ST , OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT .

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