OSG65R900PF PDF and Equivalents Search

 

OSG65R900PF Specs and Replacement

Type Designator: OSG65R900PF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO220

OSG65R900PF substitution

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OSG65R900PF datasheet

 ..1. Size:1016K  oriental semi
 osg65r900pf.pdf pdf_icon

OSG65R900PF

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 5.1. Size:1029K  oriental semi
 osg65r900def.pdf pdf_icon

OSG65R900PF

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 5.2. Size:1034K  oriental semi
 osg65r900df.pdf pdf_icon

OSG65R900PF

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 5.3. Size:896K  oriental semi
 osg65r900atf.pdf pdf_icon

OSG65R900PF

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Detailed specifications: OSG65R900AF , OSG65R900ATF , OSG65R900DEF , OSG65R900DF , OSG65R900FEF , OSG65R900FF , OSG65R900FTF , OSG65R900GTF , SI2302 , OSG70R1K4AF , OSG70R1K4DF , OSG70R1K4FF , OSG70R1K4PF , OSG70R1KAF , OSG70R1KDF , OSG70R1KFF , OSG70R1KPF .

Keywords - OSG65R900PF MOSFET specs

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