RJK03C2DPB Datasheet. Specs and Replacement

Type Designator: RJK03C2DPB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 1050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: LFPAK

RJK03C2DPB substitution

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RJK03C2DPB datasheet

 0.1. Size:278K  renesas
 rej03g1831 rjk03c2dpbds.pdf pdf_icon

RJK03C2DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:80K  renesas
 rej03g1921 rjk03c5dpads.pdf pdf_icon

RJK03C2DPB

Preliminary Datasheet RJK03C5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1921-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES... See More ⇒

 8.2. Size:278K  renesas
 rej03g1830 rjk03c1dpbds.pdf pdf_icon

RJK03C2DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.3. Size:117K  renesas
 rej03g1822 rjk03c0dpads.pdf pdf_icon

RJK03C2DPB

Preliminary Datasheet RJK03C0DPA REJ03G1822-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-... See More ⇒

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Detailed specifications: RJK0396DPA, RJK0397DPA, RJK03A4DPA, RJK03B7DPA, RJK03B8DPA, RJK03B9DPA, RJK03C0DPA, RJK03C1DPB, IRF1407, RJK03C5DPA, RJK03E0DNS, RJK03E1DNS, RJK03E2DNS, RJK03E3DNS, RJK03E4DPA, RJK03E5DPA, RJK03E6DPA

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