CEM9935A Todos los transistores

 

CEM9935A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEM9935A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 216 pF

Resistencia drenaje-fuente RDS(on): 0.036 Ohm

Empaquetado / Estuche: SO8

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CEM9935A Datasheet (PDF)

1.1. cem9935a.pdf Size:141K _cet

CEM9935A
CEM9935A

CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6.0A, RDS(ON) = 36m? @VGS = 10V. RDS(ON) = 42m? @VGS = 4.5V. RDS(ON) = 75m? @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 8 7 6 5 Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MA

4.1. cem9936a.pdf Size:139K _cet

CEM9935A
CEM9935A

CEM9936A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 5.4A, RDS(ON) = 40m? @VGS = 10V. RDS(ON) = 55m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless

 5.1. cem9953a.pdf Size:141K _cet

CEM9935A
CEM9935A

CEM9953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V, -3.5A, RDS(ON) = 80m? @VGS = -10V. RDS(ON) = 130m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C u

5.2. cem9926a.pdf Size:409K _cet

CEM9935A
CEM9935A

CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 27m? @VGS = 4.5V. RDS(ON) = 40m? @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

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