FDS6570A MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS6570A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 47 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
Package: SO8
FDS6570A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS6570A Datasheet (PDF)
fds6570a.pdf
March 2000FDS6570ASingle N-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeaturesThis N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. RDS(on) = 0.0075 @ VGS = 4.5 Vusing Fairchild Semiconductor's advancedPowerTrench process that has been especially tailored RDS(on) = 0.010 @ VGS = 2.5 V.to minimize on-state resistance and
fds6570a.pdf
FDS6570ASingle N-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeaturesThis N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. RDS(on) = 0.0075 @ VGS = 4.5 Vusing ON Semiconductor's advanced PowerTrench process that has been especially tailored RDS(on) = 0.010 @ VGS = 2.5 V.to minimize on-state resistance and yet maintain sup
fds6572a.pdf
September 2001FDS6572A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 8 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate c
fds6574a.pdf
May 2008tmMFDS6574A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 7 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 9 m @ VGS = 1.8 Vswitching PWM controllers. It has been optimi
fds6575.pdf
September 2001 FDS6575 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P 2.5V specified MOSFET is a rugged -Channel 10 A, 20 V. R = 13 m @ V = 4.5 V DS(ON) GSgate version of Fairchild Semiconductors advanced R = 17 m @ V = 2.5 V DS(ON) GSPowerTrench process. It has been optimized for power management applications wi
fds6576.pdf
December 2006tmFDS6576P-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is in a rugged 11 A, 20 V. RDS(ON) = 0.014 @ VGS = 4.5 V gate versionof Fairchild Semiconductor's advanced RDS(ON) = 0.020 @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a
fds6574a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds6576.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds6575.pdf
FDS6575www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical E
Datasheet: FDS3580 , FDS4410 , FDS4435 , FDS4435A , FDS4953 , FDS5680 , FDS5690 , FDS6375 , 7N65 , FDS6575 , FDS6576 , FDS6612A , FDS6614A , FDS6630A , FDS6670A , FDS6675 , FDS6680 .
