All IGBT. GT15Q101 Datasheet


GT15Q101 IGBT. Datasheet pdf. Equivalent

Type Designator: GT15Q101

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 4

Maximum Collector Current |Ic|, A: 15

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 500

Package: TOP3

GT15Q101 Transistor Equivalent Substitute - IGBT Cross-Reference Search


GT15Q101 Datasheet (PDF)

7.1. gt15q102.pdf Size:189K _1


GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-emitter voltage VCES 1200 V

Datasheet: GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , IXGR40N60C2D1 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 .


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