SRC11N65TC Specs and Replacement
Type Designator: SRC11N65TC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 131.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.1 nS
Cossⓘ - Output Capacitance: 782 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.348 Ohm
Package: TO-220C
SRC11N65TC substitution
- MOSFET ⓘ Cross-Reference Search
SRC11N65TC datasheet
src11n65.pdf
Datasheet 11A, 650V, Super Junction N-Channel Power MOSFET SRC11N65 General Description Symbol The Sanrise SRC11N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable for applications which require superior power density and outstanding ef... See More ⇒
Detailed specifications: SQV90N06-05, SRADM1002, SRADM1003, SRADM1004, SRADM1005, SRADM1006, SRADM1007, SRADM1008, RFP50N06, SRC11N65TF, SRC4N65D1, SRC4N65DTR, SRC4N65TC, SRC4N65TF, SRC7N65D1, SRC7N65DTR, SRC7N65TC
Keywords - SRC11N65TC MOSFET specs
SRC11N65TC cross reference
SRC11N65TC equivalent finder
SRC11N65TC pdf lookup
SRC11N65TC substitution
SRC11N65TC replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
