All MOSFET. SI4416DY Datasheet

 

SI4416DY Datasheet and Replacement


   Type Designator: SI4416DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0121(typ) Ohm
   Package: SO8
 

 SI4416DY substitution

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SI4416DY Datasheet (PDF)

 ..1. Size:46K  vishay
si4416dy.pdf pdf_icon

SI4416DY

Si4416DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)0.018 @ VGS = 10 V 9.030300.028 @ VGS = 4.5 V 7.3DSO-8SD1 8S D2 7SD3 6 GG D4 5Top ViewSOrdering Information: Si4416DYN-ChannelSi4416DY-T1 (with Tape and Reel)MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE N

 ..2. Size:818K  cn vbsemi
si4416dy.pdf pdf_icon

SI4416DY

SI4416DYwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

 9.1. Size:93K  international rectifier
si4410dy.pdf pdf_icon

SI4416DY

PD - 91853CSi4410DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.0135Top ViewDescriptionThis N-channel HEXFET Power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gat

 9.2. Size:249K  vishay
si4413ady.pdf pdf_icon

SI4416DY

Si4413ADYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0075 at VGS = - 10 V - 15 TrenchFET Power MOSFET - 300.011 at VGS = - 4.5 V - 12.3APPLICATIONS Notebook- Load Switch- Battery SwitchSSO-8S 1 8DS 2 7DGS 3 6DG 4 5 DTop View

Datasheet: SI2342DS-T1 , SI2351DS-T1 , SI2399DS-T1 , SI3911DV-T1 , SI4401BDY-T1 , SI4401DDY-T1-GE3 , SI4405DY-T1 , SI4410DY-T1 , 8205A , SI4421DY-T1 , SI4431CDY-T1-E3 , SI4435BDY , SI4435DY-T1-E3 , SI4466DY-T1 , SI4532ADY-T1 , SI4539DY-T1 , SI4840DY-T1-E3 .

History: IRF5851TR | PDP3960 | YJS03N10A | NTR3C21NZ | RU3091M | SL120N03R | SQM50N04-5M0

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