HGB155N15S Datasheet. Specs and Replacement

Type Designator: HGB155N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 174 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 183 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO-263

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HGB155N15S datasheet

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HGB155N15S

, HGB155N15S HGP155N15S P-1 150V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 150 V VDS Enhanced Body diode dv/dt capability 13.5 RDS(on),typ mW Enhanced Avalanche Ruggedness 67 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit ... See More ⇒

Detailed specifications: HGK110N20S, HGP110N20S, HGB115N15S, HGP115N15S, HGB120N10A, HGP120N10A, HGB130N12S, HGP130N12S, 7N65, HGP155N15S, HGB170N10A, HGP170N10A, HGB170N10AL, HGP170N10AL, HGB190N15S, HGP190N15S, HGB195N15S

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