All MOSFET. HGB155N15S Datasheet

 

HGB155N15S Datasheet and Replacement


   Type Designator: HGB155N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 174 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 67 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-263
 

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HGB155N15S Datasheet (PDF)

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HGB155N15S

,HGB155N15S HGP155N15S P-1150V N-Ch Power MOSFETFeature High Speed Power Smooth Switching 150 VVDS Enhanced Body diode dv/dt capability 13.5RDS(on),typ mW Enhanced Avalanche Ruggedness 67 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit

Datasheet: HGK110N20S , HGP110N20S , HGB115N15S , HGP115N15S , HGB120N10A , HGP120N10A , HGB130N12S , HGP130N12S , STP75NF75 , HGP155N15S , HGB170N10A , HGP170N10A , HGB170N10AL , HGP170N10AL , HGB190N15S , HGP190N15S , HGB195N15S .

History: DMG6602S | RJU003N03T106 | H7P1002DS | TTP145N08A | HM5N65F

Keywords - HGB155N15S MOSFET datasheet

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